to-92 plastic-encapsulate transistors 2SA562 transistor (pnp) fea tures excellent h fe l inearlity maximum ra tings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -35 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current -continuous -500 ma p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions m in typ max unit collector-base breakdown voltage v(br) cbo i c = -100 a , i e =0 -35 v collector-emitter breakdown voltage v(br) ceo i c = -1ma , i b =0 -30 v emitter-base breakdown voltage v(br) ebo i e = -100 a, i c =0 -5 v collector cut-off current i cbo v cb =-35v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 a dc current gain h fe v ce =-1v, i c =-100ma 70 240 collector-emitter saturation voltage v ce(sat) i c = -100ma, i b = -10ma -0.25 v base-emitter voltage v be v ce =-1v,i c =-100ma -1 v transition frequency f t v ce = -6v, i c = -20ma 200 mhz collector output capacitance c ob v cb =- 6 v,i e =0,f= 1 mhz 13 pf classification of h fe rank o y range 70-140 120-240 to-92 1. emitter 2. collector 3. base tiger electronic co.,ltd % ' h f,2011
-1 -10 -100 -10 -100 -200 -400 -600 -800 -1000 -1200 -1 -10 -100 -1 -10 -100 10 100 1000 -1 -10 -100 -200 -400 -600 -800 -1000 -1200 0 25 50 75 100 125 150 0 125 250 375 500 625 -0.1 -1 -10 1 10 100 -0.0 -0.5 -1.0 -1.5 -0 -40 -80 -120 -100 10 100 1000 -300 f t ?? i c ?? h fe ?? -500 t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector current i c (ma) -500 t a =25 t a =100 common emitter v ce =-1v collcetor current i c (ma) base-emmiter voltage v be (mv) common emitter v ce =-1v t a =25 t a =100 i c dc current gain h fe collector current i c (ma) -500 i c v be -500 =10 t a =100 t a =25 i c v besat ?? base-emitter saturation voltage v besat (mv) collector current i c (ma) collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a c ob c ib f=1mhz i e =0 / i c =0 t a =25 capacitance c (pf) reverse voltage v (v) -20 v cb / v eb c ob / c ib ?? static characteristic -0.80ma -0.72ma -0.64ma -0.56ma -0.48ma -0.40ma -0.32ma -0.24ma -0.16ma common emitter t a =25 i b =-0.08ma collector current i c (ma) collector-emitter voltage v ce (v) 2SA562 typical characteristics common emitter v ce = -6v t a =25 transition frequency f t (mhz) collector current i c (ma) -10 % ' h f,2011
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